symbol v ds v gs i dm i ar e ar t j , t stg symbol typ max 26 40 50 75 r q jl 14 24 a repetitive avalanche energy l=0.3mh g 240 mj w maximum junction-to-lead c steady-state c/w thermal characteristics parameter units maximum junction-to-ambient a t 10s r q ja c/w maximum junction-to-ambient a steady-state c/w 20 gate-source voltage drain-source voltage -30 continuous drain current af maximum units parameter t a =25c t a =70c absolute maximum ratings t a =25c unless otherwise noted vv -13.6 -60 pulsed drain current b power dissipation a t a =25c avalanche current g 40 junction and storage temperature range a p d c 3.1 2 -55 to 150 t a =70c i d -15 AO4447 30v p-channel mosfet product summary v ds (v) = -30v i d = -15 a (v gs = -10v) max r ds(on) < 7.5m w (v gs = -10v) max r ds(on) < 12m w (v gs = -4v) esd rating: 4kv hbm 100% uis tested 100% rg tested general description the AO4447 uses advanced trench technology to provide excellent r ds(on) , and ultra-low low gate charge. this device is suitable for use as a load switch. the device is esd protected. soic-8 top view bottom view d d d d s s s g s g d alpha & omega semiconductor, ltd. www.aosmd.com
AO4447 symbol min typ max units bv dss -30 v -1 t j =55c -10 i gss 10 m a v gs(th) -0.9 -1.25 -1.6 v i d(on) -60 a 6.7 7.5 t j =125c 9.4 12 9.2 12 m w g fs 60 s v sd -0.69 -1 v i s 5.5 a c iss 5500 6600 pf c oss 745 pf c rss 473 pf r g 3.1 4 w q g 88.8 120 nc q g (4.5v) 45.2 60 nc q gs 10.1 nc q gd 19.4 nc t d(on) 12 ns t r 11.5 ns t d(off) 100 ns t f 40 ns t rr 46.6 60 ns q rr 67.7 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery time body diode reverse recovery charge i f =-15a, di/dt=100a/ m s drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-15a reverse transfer capacitance i f =-15a, di/dt=100a/ m s electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a gate threshold voltage v ds =v gs i d =-250 m a v ds =-30v, v gs =0v v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current r ds(on) static drain-source on-resistance forward transconductance diode forward voltage m w v gs =-4v, i d =-13a i s =-1a,v gs =0v v ds =-5v, i d =-15a turn-on rise time turn-off delaytime v gs =-10v, v ds =-15v, r l =1.7 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time switching parameters total gate charge v gs =-10v, v ds =-15v, i d =-15a gate source charge maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters v gs =0v, v ds =-15v, f=1mhz gate drain charge gate charge a: the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application depends on the user's specific board design. b: repetitive rating, pulse width limited by junctio n temperature. c. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. d. the static characteristics in figures 1 to 6,12,14 are obtained using <300 m s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted o n 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. f.the current rating is based on the t 10s thermal resistance rating. g. ear and iar ratings are based on low frequency and duty cycles such that tj(start)=25c for each pulse. rev7: nov. 2010 alpha & omega semiconductor, ltd. www.aosmd.com
AO4447 typical electrical and thermal characteristics 0 10 20 30 40 50 60 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics -i d (a) v gs =-2.5v -3.5v -4v -10v -3v 0 5 10 15 20 25 1 1.5 2 2.5 3 -v gs (volts) figure 2: transfer characteristics -i d (a) 6 8 10 12 0 5 10 15 20 25 -i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 -v sd (volts) figure 6: body-diode characteristics -i s (a) 25c 125c 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =-10v i d =-15a v gs =-4v i d =-13a 0 5 10 15 20 25 30 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-4v v gs =-10v i d =-15a 25c 125c alpha & omega semiconductor, ltd. www.aosmd.com
AO4447 typical electrical and thermal characteristics 0 2 4 6 8 10 0 20 40 60 80 100 -q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 1000 2000 3000 4000 5000 6000 7000 8000 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 20 40 60 80 100 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance z q qq q ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 m s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c v ds =-15v i d =-15a single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =40c/w t on t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c 10 m s alpha & omega semiconductor, ltd. www.aosmd.com
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